Lenovo G470 COMPAL LA-6751 Schematic Circuit Diagram

 Lenovo G470 COMPAL LA-6751 Schematic Circuit Diagram

Lenovo G470 COMPAL LA-6751 Schematic Circuit Diagram

From Tubes to Transistors Invention History, The main Components of Triode Vacuum Tube

MOSFETs can be constructed as two types. First is N Chanel Mosfet (NMOS) and the second is P Chanel Mosfet (PMOS) types, based on the layout of doped silicon used. Silicon doped with boron is called P-Type (positive) because it lacks electrons, whereas silicon doped with phosphorus is called N-type (negative) because it has an overplus of free electrons.

MOSFETs have three connections, there are called the source, gate, and drain. An NMOS transistor is constructed by using N-type silicon for the source and drain, with P-type silicon to place in between. The gate is covered above the P-type silicon, separates the source and drain, and is separated from the P-type silicon by an insulator layer of silicon dioxide. Normally there is no current stream between N-type and P-type silicon, thus preventing electron flow between the source and drain. When a positive voltage is thrown on the gate, the gate electrode creates a field that attracts electrons to the P-type silicon between the source and drain. That it turn on changes that are to behaviors if it were N-type silicon, creating a way for current to flow and turning the transistor on.


The above picture consists of two plates to the left and right of a square bar at the center which indicates “Gate.” The left side of the plate is indicated as “Metal conductors.” The left bar indicates “Source” and the right bar indicates “Drain.” Right below the left bar, a square is labeled “Polysilicon gate electrode.” Below the right bar, “Silicon dioxide (insulator)” is indicated. Right below, there are two half squares labeled “N-type silicon” inside a half rectangle “P-type silicon.” At the ultra bottom, “Silicon substrate” is labeled. 

Free Download Lenovo G470 COMPAL LA-6751 Schematic Circuit Diagram

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