Foxconn 661M07 REV A Schematic Circuit Diagram

Foxconn 661M07 REV A Schematic Circuit Diagram

Foxconn 661M07 REV A Motherboard

Processor Manufacturing

Wafer with 4th generation Core I processor dies measuring 300mm (12 inches). Intel Corporation provided the below image.

A procedure known as photolithography is used to create chips from wafers. Transistors, circuits, and signal routes are formed in semiconductors using this photographic method, which involves depositing distinct layers of diverse materials on the chip one after the other. A transistor or switch can arise where two specified circuits cross.

The first 3D transistor, the Tri-Gate transistor, was designed by Intel in 2002, and it was introduced into Intel's 22-nanometer technology in 2012. A Tri-Gate transistor has three gates on three sides of a silicon fin that connects vertically to the substrate. In comparison to typical "flat" transistors, more transistors may be packed into the same area. 3D transistors can assist to develop more powerful processors and enable more processors to be built from a wafer by reducing the amount of space required for a specific number of transistors.

The photolithographic process begins with the vapor deposition of an insulating layer of silicon dioxide on the wafer. After that, a photoresist coating is placed, and an image of that chip layer is projected onto the now light-sensitive surface through a mask.

Chemical impurities are added to silicon (which is normally a nonconductor) to create a material with semiconductor qualities, which is known as doping. The projector employs a custom-made mask, which is simply a negative of that chip layer etched in chrome on a quartz plate. Modern processors feature up to six layers of metal interconnects and 20 or more layers of material placed and partially etched away (each needing a mask).

Foxconn 661M07 REV A Schematic Circuit Diagram

Free Download Foxconn 661M07 REV A Schematic Circuit Diagram

Next Post Previous Post
No Comment
Add Comment
comment url