MSI G41M-P33 Combo Schematic Circuit Diagram - Boardview
MSI G41M-P33 Combo Schematic Circuit Diagram - Boardview
MSI G41M-P33 Combo Features
- Supports Intel® Core 2 Quad/Core 2 Duo processors in the LGA775 format.
- Intel® next-generation 45nm multi-core CPUs are supported.
- FSB 1333/1066/800 MHz is supported.
- Compliant with the VRD 11.1 standard.
- FMB 05a@95W is supported.
Chipset
- FSB 800/1066/1333 MHz is supported by the Intel® G41 Chipset.
- Intel® GMA X4500 (Integrated Intel Graphics Media Accelerator)
- Microsoft® DirectX 10 is supported.
- Hi-Speed USB (USB2.0) controller
- Intel® ICH7 Chipset, 480Mb/sec, up to 8 ports
- 4 SATAII ports with a maximum transfer rate of 3Gb/s
- Ultra ATA 100 bus master IDE controller with 1 channel.
- I/O APIC, PCI Master v2.3.
I/O Connectors on the Inside
- 4-pin ATX 12V power connector 24-pin ATX power connector
- FAN connections for CPU x1 and System x2
- Connector for CDs
- Audio input on the front panel
- Connector on the front panel
- 1 × intrusion connection for chasis
- USB 2.0 connections (two)
- 4 x ATAII Serial connections
- 1 × ATA100 interface
- SPDIF-Out connection (one)
- CMOS Jumper (Clear)
- TPM module connection (one)
How to Motherboard Processor Manufacturing
Silicon on insulators is another chip method of construction (SOI). SOI reduces parasitic device capacitance by using a layered silicon-insulator-silicon wafer substrate, which reduces current leakage and improves performance. Since 2001, AMD has used SOI in a large number of its chips.
As many chips as possible are imprinted on a completely circular wafer. Because each chip is normally square or rectangular, there are some unused areas around the wafer's borders, but every square millimeter of the surface is used.
In chip production, the sector is undergoing many changes. The industry is moving toward bigger wafers and a more efficient production method. The wafer size refers to the diameter of the circular wafers on which the chips are stamped, whereas the process relates to the size and line spacing of the individual circuits and transistors on the chip.
The 90-nanometer (0.09-micron) process was introduced in 2004, followed by the 65-nanometer (0.06-micron) process in 2006, the 45-nanometer process in 2008, the 32-nanometer process in 2010, and the 22-nanometer process in 2012.
Chip production began transitioning from 200mm (8-inch) wafers to bigger 300mm (12-inch) wafers in 2002. When compared to the 200mm wafers used earlier, the bigger 300mm wafers allow for more than twice the number of chips to be produced. Furthermore, the move to smaller and smaller technologies allows for the incorporation of additional transistors into the semiconductor die.
